| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device (compound IC) where a MOS transistor and a bipolar transistor are formed in an SOI substrate with buried oxide, which is constituted without impeding the behavior of various elements. SOLUTION: The semiconductor device 100 is constituted such that a lateral MOS transistor LTr1 and a bipolar transistor BTr at least are formed in a same SOI substrate 10 with a buried oxide 3. In an SOI layer 1a consisting of a first electric conduction type (n) on the buried oxide 3, the lateral MOS transistor LTr1 and the bipolar transistor BTr1 are arranged respectively while being surrounded by insulating separation trenches T which reach the buried oxide 3. Except for an arrangement region of the lateral MOS transistor LTr1 at least, the first semiconductor layer 1b of the first electric conduction type (n) having higher concentration than that of the SOI layer 1a is brought into contact with the buried oxide 3. COPYRIGHT: (C)2008,JPO&INPIT |
