发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 muOmegacm.
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申请公布号 |
US2007259512(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20070822191 |
申请日期 |
2007.07.03 |
申请人 |
YAMADA KENTARO;TAKAHASHI MASATO;KONAGAYA TATSUYUKI;KATOH TAKESHI;SAKASHITA MASAKI;TAKEI KOICHIRO;OBARA YASUHIRO;FUKAYAMA YOSHIO |
发明人 |
YAMADA KENTARO;TAKAHASHI MASATO;KONAGAYA TATSUYUKI;KATOH TAKESHI;SAKASHITA MASAKI;TAKEI KOICHIRO;OBARA YASUHIRO;FUKAYAMA YOSHIO |
分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/423;H01L29/49;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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