发明名称 |
CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
摘要 |
Exemplary embodiments provide a scalable process for the growth of large scale and uniform III-N nanoneedle arrays with precise control of the position, cross sectional shape and/or dimensions for each nanoneedle. In an exemplary process, a plurality of nanoneedle array can be formed by growing one or more semiconductor material in a plurality of patterned rows of apertures with a predetermined geometry. The plurality of patterned rows of apertures can be formed though a thick selective nanoscale growth mask, which can later be removed to expose the plurality of nanoneedle arrays. The plurality of nanoneedle arrays can be connected top and bottom by a continuous coalesced epitaxial film, which can be used in a planar semiconductor process or be further configured as a photonic crystal to improve the output coupling of nanoscale optoelectronic devices such as LEDs and/or lasers.
|
申请公布号 |
US2007257264(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20060559214 |
申请日期 |
2006.11.13 |
申请人 |
HERSEE STEPHEN D;WANG XIN;BRUECK STEVEN R;SUN XINYU |
发明人 |
HERSEE STEPHEN D.;WANG XIN;BRUECK STEVEN R.;SUN XINYU |
分类号 |
H01L31/0256;H01L33/00;H01L33/08 |
主分类号 |
H01L31/0256 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|