发明名称 |
System for Low-Energy Plasma-Enhanced Chemical Vapor Deposition |
摘要 |
A system ( 10 ) for low-energy plasma-enhanced chemical vapor deposition comprising plasma source ( 100 ), deposition chamber ( 200 ) and gas distribution system ( 300 ) for semiconductor epitaxy on substrates up to 300 mm in size is described. The system ( 10 ) allows for fast switching from high to low deposition rates, and film thickness control at the monolayer level. It incorporates chamber self-cleaning and the provisions for selective epitaxial growth. The system ( 10 ) contains a broad-area plasma source ( 100 ) which can be used also in other applications, such as low-energy ion implantation and plasma treatment of surfaces.
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申请公布号 |
US2007259130(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20050569799 |
申请日期 |
2005.04.22 |
申请人 |
VON KAENEL HANS;HAID REINHARD |
发明人 |
VON KAENEL HANS;HAID REINHARD |
分类号 |
C23C16/00;C23C16/503;H01J37/32 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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