| 摘要 |
<p>A method for forming a semiconductor device includes providing a semiconductor layer (12), forming a passivation layer (20) over the semiconductor layer, wherein the passivation layer has an opening (24) having sidewalls, forming a fin (16) over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening, and forming a portion of a gate within the opening. In one embodiment, a dummy gate (52) is used. In one embodiment, spacers (28, 56) are formed within the opening of the passivation layer. The structure is also discussed.</p> |
