发明名称 VAPOR DEPOSITION OF OXIDES, SILICATES, AND PHOSPHATES
摘要 Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 °C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl) amide to deposit lithium phosphate films on substrates heated to 250 °C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
申请公布号 KR20070107813(A) 申请公布日期 2007.11.07
申请号 KR20077024096 申请日期 2007.10.19
申请人 THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 GORDON ROY G.;BECKER JILL;HAUSMANN DENNIS;SUH SEIGI
分类号 C23C16/40;C23C16/42;C07F9/09;C07F9/11;C23C16/44;C23C16/455;H01L21/314;H01L21/316 主分类号 C23C16/40
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