| 摘要 |
<p>A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules (8) at high temperatures includes a crucible (6) effective to contain an AlN source material (7) and a growing AlN crystal boule (8). This crucible (6) has a thin wall thickness (t 1 )in at least that portion (23) housing the growing AlN crystal boule (8). Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100°C/cm and a furnace chamber capable of being operated from a vacuum <1.33x10 -5 MPa (<0.1torr) to a gas pressure of at least 0.533 MPa (4000torr) through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule (8) growth rate and the thin wall thickness (t 1 ) contributes to reduced imparted stress during boule (8) removal.</p> |
