| 发明名称 |
STACKED RF POWER AMPLIFIER |
| 摘要 |
<p>A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.</p> |
| 申请公布号 |
EP1673858(A4) |
申请公布日期 |
2007.11.07 |
| 申请号 |
EP20040789219 |
申请日期 |
2004.09.23 |
| 申请人 |
SILICON LABORATORIES, INC. |
发明人 |
DUPUIS, TIMOTHY, J.;PAUL, SUSANNE, A. |
| 分类号 |
H03F3/68;H03F1/52;H03F3/193;H03F3/21;H03F3/24;H03F3/42 |
主分类号 |
H03F3/68 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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