TANTALUM COMPOUND, METHOD FOR PRODUCING SAME, TANTALUM-CONTAINING THIN FILM AND METHOD FOR FORMING SAME

摘要

Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element. The present invention relates to a tantalum compound represented by the following formula (1)
(In the formula, R 1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms),
or a tantalum compound represented by the general formula (2)
(In the formula, R 2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same. The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6)
(In the formula, j, k, m and n is an integer of from 1 to 4 satisfying j+k=5 and m+n=5, and R 3 to R 6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like)
as a raw material.