| 摘要 |
<p>A method of manufacturing a semiconductor device, comprising the steps of forming a plurality of pads (2) on insulating films (1), forming a passivation film (3) on the entire surfaces thereof, forming opening parts (3a) for exposing all pads (2) in the passivation film (3), forming another passivation film on the entire surfaces thereof, and forming opening parts for exposing the center parts of the pads (2) for each pad (2), whereby a probing test can be performed in such a state that the opening parts (3a) are formed in the passivation film (3), and the probability of the contact of a probe with the pads (2) is increased since the entire surfaces of the pads (2) are exposed when the probing test is performed in this state and an accurate test can be performed, and the pads can be refined and the pitches thereof can be reduced without requiring a higher accuracy for the probe.</p> |
