发明名称 |
TEMPERATURE SETTING METHOD FOR HEAT TREATING PLATE, TEMPERATURE SETTING DEVICE FOR HEAT TREATING PLATE, PROGRAM AND COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM |
摘要 |
<p>A hot plate temperature is set so as to form the line width of a resist pattern uniformly in a wafer plane. The hot plate of a PEB device is divided into a plurality of hot plate regions, with temperature setting being possible for each hot plate region. A temperature correction value for regulating the in-plane temperature of a wafer to be mounted on the hot plate is set for each hot plate region of the hot plate. The temperature correction value of each hot plate region of the hot plate is calculated and set by a calculation model formulated from the correlation between the line width of a resist pattern formed by being heat treated on the hot plate and a temperature correction value. A calculation model M calculates such a temperature correction value that makes uniform a wafer-in-plane line width based on the line width measurement of a resist pattern.</p> |
申请公布号 |
KR20070107042(A) |
申请公布日期 |
2007.11.06 |
申请号 |
KR20077018636 |
申请日期 |
2006.02.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
JYOUSAKA MEGUMI;TOMITA HIROSHI;TADOKORO MASAHIDE |
分类号 |
H01L21/027;G03F7/38;H01L21/02;H05B3/00;H05B3/74 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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