| 摘要 |
A ferroelectric random access memory device, includes at least one bit line extending in a first direction; a plurality of first active regions, arranged in the first direction a predetermined distance from each other on one side of the bit line, each being connected to the bit line and a first ferroelectric capacitor; and a plurality of second active regions, arranged in the first direction a predetermined distance from each other on the other side of the bit line, each being connected to the bit line and a second ferroelectric capacitor, the first active regions partly overlapping, in the first direction, the second active regions respectively neighboring the first active regions, and being arranged a predetermined distance from the respective neighboring second active regions in a second direction crossing the first direction.
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