发明名称 |
Electrostatic protection circuit |
摘要 |
An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and an NMOS transistor formed on the substrate, comprising a gate, a source and a drain, wherein the drain is formed in the N well and coupled to a Vcc, and the source is formed in the P deep well; and a second P+ doped region formed in the P deep well. The ESD protection circuit uses a smaller area than the conventional ESD protection circuit.
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申请公布号 |
US7291870(B2) |
申请公布日期 |
2007.11.06 |
申请号 |
US20040904475 |
申请日期 |
2004.11.12 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI CHUN-HSIANG;SU SHIN;LU CHIA-LING;YEH YEN-HUNG;LU TAO-CHENG |
分类号 |
H01L29/72;H01L23/60;H01L27/02;H01L29/74 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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