FABRICATION METHOD OF TRANSISTORS HAVING A HIGH MOBILITY AND TRANSISTORS FABRICATED THEREBY

摘要

A transistor having high mobility and a manufacturing method thereof are provided to suppress a leakage current at a hetero-junction between a source/drain region semiconductor layer and a semiconductor substrate by forming the source/drain region semiconductor layer in a recrystallized single crystal structure. Gate patterns(135a,135b,135c) are formed on a semiconductor substrate(100). A preliminary semiconductor layer is formed on the semiconductor substrate at both sides of the gate pattern. Source/drain semiconductor layers(155,156) are formed on the preliminary semiconductor layer by irradiating a laser beam on the preliminary semiconductor layer. A heterojunction is formed between the semiconductor substrate and the source/drain semiconductor layer. The source/drain semiconductor layer is formed in a recrystallized single crystal structure.