SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to improve a contact property of the semiconductor device by partially or globally removing a second stress film from an overlap region between the first and the second stress films. A semiconductor substrate(100) includes first and second transistor regions and a border region. The first transistor region includes a first gate electrode and a first source/drain region. The second transistor region includes a second gate electrode and a second source/drain region. The border region includes a third gate electrode and is arranged on an interface between the first and the second transistor regions. A first stress film(131) covers the first gate and the first source/drain region and at least a portion of the third generates. A second stress film(135) covers the second gate and the second source/drain region and is not overlapped with the first stress film or partially overlapped with the first stress film. A thickness of the partially overlapped second stress film is smaller than that of the second stress film on the second transistor region.