| 摘要 |
<p>A method of manufacturing a semiconductor device is provided to reduce a difference in EFH(Effective Fox Height) values between a center and an edge region of a cell by exposing a side portion of a second conductive film. A tunnel oxide film(202), a first conductive film(204), and a hard mask film are laminated on an active region. An isolation film(208) is formed in a field region on a semiconductor substrate(200). The hard mask film is removed to expose a portion of the isolation film. A second conductive film is filled in a space between the exposed isolation films. A portion of an upper portion of the isolation film is removed by using a pre-cleaning process, so that a sidewall of the second conductive film is exposed. A dielectric film(212) and a third conductive film(214) are formed on the semiconductor substrate to include the isolation film and the second conductive film(210).</p> |
