SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SMAE

摘要

A semiconductor device and a manufacturing method thereof are provided to improve an operation reliability of the semiconductor device by forming a workout-free clamp diode. A semiconductor device includes a semiconductor substrate(110), a first conductive type low voltage well(LV P-well), a second conductive type high voltage dopant region(112), a second conductive type high concentration dopant region(114), and a first conductive type floating dopant region(115'). The semiconductor substrate includes a device isolation film which defines an active region. The first conductive type low voltage well is provided in the active region. The second conductive type high voltage dopant region is formed in the active region over the first conductive type low voltage well. The second conductive type high concentration dopant region is formed in the second conductive type high voltage dopant region to be apart from the device isolation film. The first conductive type floating dopant region is arranged on the semiconductor substrate between the device isolation film and the second conductive type high concentration dopant region.