| 摘要 |
<p>A recess gate in a semiconductor device and a method for manufacturing the semiconductor device are provided to prevent dangling bonds and etch damages of a semiconductor substrate by forming a recess gate without using a direct recess etching process. A recess gate in a semiconductor device includes a semiconductor substrate(21), a silicon film(25), a gate insulation film(26), a gate conduction film(27A), and a gate metal film(28). The silicon film defines an open region. The gate insulation film is formed along an inner surface of the open region while enclosing a corner of the silicon film. The gate conduction film is formed on the gate insulation film and buries the open region. The gate metal film is formed on the gate conduction film. The silicon film is formed by using a solid growth process.</p> |
