| 摘要 |
A semiconductor device capable of preventing corrosion of a metal line and a fabricating method thereof are provided to stabilize a plug process by volatilizing or blocking Cl2 steam remaining in a tungsten plug. A barrier metal(24A) having Ti and TiN is formed on an interlayer dielectric(22) with a contact hole(23), and then a tungsten layer is formed on the barrier metal. The entire surface of the tungsten layer is etched to form a tungsten plug(25A). The entire surface of the barrier metal is etched by using plasma comprising chlorine. The tungsten plug is subjected to plasma treatment containing oxygen to remove impurities remaining in the tungsten plug. A metal line is formed on the tungsten plug.
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