| 摘要 |
A method and an apparatus for treating a substrate are provided to reduce an amount of a source gas by directly injecting the source gas into a path, which is formed between first and second electrodes. A substrate treating apparatus includes a supporting member(100), a gas supplying unit(300), and a plasma generating unit. The plasma generating unit includes first and second electrodes(240,260). The first electrodes are arranged to be apart from each other on a substrate. A first voltage is applied on the first electrodes. The second electrodes are arranged to be apart from each other on the substrate. A second voltage, which is lower than the first voltage, is applied on the second electrodes. The first electrode includes a first metal electrode and a first dielectric member, which encloses an outer periphery of the first metal electrode. The second electrode includes a second metal electrode and a second dielectric member, which encloses an outer periphery of the second metal electrode. The first and the second electrodes are alternatively arranged, such that plasma is generated between the first and the second electrodes.
|
