发明名称 MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF, MAGNETORESISTIVE ELEMENT ASSEMBLY, THIN FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, HEAD ARM ASSEMBLY, AND MAGNETIC DISK DEVICE
摘要 PROBLEM TO BE SOLVED: To increase an MR ratio in an MR element where a current flows in the direction crossing the surface of each layer forming the MR element and also reduce variation in the characteristic thereof. SOLUTION: In the MR element 5, a fixed layer 23 and a free layer 25 respectively include Heusler alloy layers 332, 52. The Heusler alloy layers 332, 52 respectively have a couple of rectangular surfaces that are provided opposed with each other. Moreover, the Heusler alloy layers 332, 52 also include a crystal grain in contact with four sides in the one surface. In the manufacturing method of the MR element 5, laminated films forming the MR element 5 are formed and these films are patterned. Thereafter, the laminated films after the patterning are then exposed to heat treatment so that one crystal grain in contact with the four sides of the one surface of the film forming the Heusler alloy layer is formed through growth thereof included in the Heuslder alloy layer in the laminated films. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007287863(A) 申请公布日期 2007.11.01
申请号 JP20060112281 申请日期 2006.04.14
申请人 TDK CORP 发明人 SHIMAZAWA KOJI;TSUCHIYA YOSHIHIRO;MIZUNO TOMOHITO;MIYAUCHI DAISUKE;HARA SHINJI;MACHIDA TAKAHIKO
分类号 H01L43/08;G01R33/09;G11B5/39;H01F10/12;H01F41/18 主分类号 H01L43/08
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