| 摘要 |
PROBLEM TO BE SOLVED: To perform desired rear-surface plasma etching treatment by eliminating an influence of air bubbles formed between a front surface of a semiconductor wafer and a surface protection sheet for grinding the rear surface covering the front surface of the semiconductor wafer, in rear-surface plasma etching after grinding a rear surface of a semiconductor wafer. SOLUTION: In formation of a polyimide coat 4 of a final manufacturing process in a wafer state of a semiconductor device by providing a recess (gap) 14 to a surface of the polyimide coat 4; the influence of air bubbles formed between the front surface of the wafer and the surface protection sheet 6 for grinding the rear surface covering the front surface of the wafer is eliminated in rear-surface plasma etching after grinding the rear surface, thereby performing desired rear-surface plasma etching treatment. COPYRIGHT: (C)2008,JPO&INPIT
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