发明名称 MOCVD reactor with concentration-monitor feedback
摘要 Methods and systems permit fabricating structures using liquid sources without active temperature control. A liquid or solid source of the precursor is provided in a bubbler. A carrier gas source is flowed into the source to generate a flow of precursor vapor carried by the carrier gas. A relative concentration of the precursor vapor to the carrier gas of the flow is measured. A mass flow rate of the precursor in the flow is determined from the measured relative concentration. A flow rate of the carrier gas into the source is changed to maintain the mass flow rate at a defined value or within a defined range.
申请公布号 US2007254093(A1) 申请公布日期 2007.11.01
申请号 US20060411667 申请日期 2006.04.26
申请人 APPLIED MATERIALS, INC. 发明人 NIJHAWAN SANDEEP;WASHINGTON LORI;SMITH JACOB;KWONG GARRY;BOUR DAVID;EAGLESHAM DAVID
分类号 C23C16/52;B05C11/00;C23C16/00 主分类号 C23C16/52
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