Implanted Counted Dopant Ions

摘要

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms ( 142 ) implanted in regions of a substrate ( 158 ) that are substantially intrinsic semiconductor. One or more doped surface regions ( 152 ) of the substrate ( 158 ) are metallised to form electrodes ( 150 ) and a counted number of dopant ions ( 142 ) are implanted in a region of the substantially intrinsic semiconductor.