| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A semiconductor device may include a composite represented by Formula 1 below as an active layer. <?in-line-formulae description="In-line Formulae" end="lead"?>x(Ga<SUB>2</SUB>O<SUB>3</SUB>).y(In<SUB>2</SUB>O<SUB>3</SUB>).z(ZnO) Formula 1<?in-line-formulae description="In-line Formulae" end="tail"?> wherein, about 0.75<=x/z<=about 3.15, and about 0.55<=y/z<=about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
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| 申请公布号 |
US2007252147(A1) |
申请公布日期 |
2007.11.01 |
| 申请号 |
US20070785269 |
申请日期 |
2007.04.17 |
| 申请人 |
KIM CHANG-JUNG;SONG I-HUN;KANG DONG-HUN;PARK YOUNG-SOO |
发明人 |
KIM CHANG-JUNG;SONG I-HUN;KANG DONG-HUN;PARK YOUNG-SOO |
| 分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
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