发明名称 |
Method for Depositing a Barrier Layer on a Low Dielectric Constant Material |
摘要 |
Embodiments of an apparatus and methods for forming a tantalum containing film using plasma enhanced atomic layer deposition are generally described herein. Other embodiments may be described and claimed.
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申请公布号 |
US2007251445(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20070745384 |
申请日期 |
2007.05.07 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ISHIZAKA TADAHIRO |
分类号 |
C30B23/00;C23C16/00;C30B25/00 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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