| 摘要 |
A method of manufacturing a ferroelectric thin film with good crystallinity and improved surface roughness includes: forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, Zr<SUB>x</SUB>Ti<SUB>(1-x)</SUB>N (0<x<1), FeN, and NbN; forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O<SUB>2</SUB>) and one reactive gas selected from the group consisting of PbO(g), Bi<SUB>2</SUB>O<SUB>3</SUB>(g), and K<SUB>2</SUB>O(g); annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO<SUB>3</SUB>, PbZr<SUB>x</SUB>Ti<SUB>(1-x)</SUB>O<SUB>3 </SUB>(0<X<1), BI<SUB>2</SUB>Ti<SUB>2</SUB>O<SUB>7</SUB>, Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>, BiFeO<SUB>3</SUB>, and KNbO<SUB>3</SUB>.
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