CLEANING POROUS LOW-K MATERIAL IN THE FORMATION OF AN INTERCONNECT STRUCTURE

摘要

A cleaning porous low-k material in forming an interconnection structure is provided to eliminate byproducts generated during a process for forming an integrated circuit by soaking a semiconductor wafer into a cleaning solution. A metal feature is formed in a dielectric layer. A low-k dielectric layer is formed on a substrate. A metal hard mask(24) is formed on the low-k dielectric layer. The metal hard mask is formed on the low-k dielectric layer to form a first opening in the metal hard mask wherein the low-k dielectric layer is exposed through the first opening. The low-k dielectric layer is etched through the first opening to form a second opening in the low-k dielectric layer. The metal feature is exposed through the second opening. The substrate and structures placed on the substrate are soaked into a cleaning solution to perform a cleaning process. The cleaning solution includes an organic solvent, a metal reagent, a substitutive agent and wafer. A diffusion barrier layer is formed in the second opening. The second opening is filled with a conductive material.