TRANSISTOR HAVING A CHANNEL WITH TENSILE STRAIN AND ORIENTED ALONG A CRYSTALLOGRAPHIC ORIENTATION WITH INCREASED CHARGE CARRIER MOBILITY

摘要

By appropriately orienting the channel length direction with respect to the crystallographic characteristics of the silicon layer, the stress-inducing effects of strained silicon/carbon material may be significantly enhanced compared to conventional techniques. In one illustrative embodiment, the channel may be oriented along the <100> direction for a (100) surface orientation, thereby providing an electron mobility increase of approximately a factor of four.