MEMORY ELEMENT, AND METHOD OF MANUFACTURING MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a memory element whose resistance simply varies due to an electrical pulse.

SOLUTION: The memory element is constructed in a manner such that a variable resistance film 504 is sandwiched between a lower metal electrode 503 and an upper metal electrode 505. Either or both of atoms constituting the lower metal electrode 503 and upper metal electrode 505 are doped in the variable resistance film 504. At least one of the upper metal electrode 505 and lower metal electrode 503 is an electrode composed of Pt, and the variable resistance film 504 is composed of an iron oxide.

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