| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a semiconductor device in which an extension region may not extend in the lower part of a gate electrode and a junction leakage current may not be generated when a shared contact is formed. <P>SOLUTION: The semiconductor device is provided with an active region 12 formed on a portion surrounded by an element isolation region 11 in a semiconductor substrate 10; a first gate structure 23A having a gate insulating film 21A, and a first gate electrode film 22A formed on the active region 12; a first offset spacer 24A formed on the side surface of the first gate structure 23A, and having a height lower than that of the first gate structure 23A; and a first sidewall 25A formed on the side surface of the gate structure 23A, so as to cover the side surface and the upper end surface of the first offset spacer 24A. <P>COPYRIGHT: (C)2008,JPO&INPIT |
