| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid state imaging element capable of actualizing an image quality higher than that in a single-board color solid state imaging element and a thickness smaller than that in a laminated imaging element, and capable of reducing the characteristic degradation of the element. <P>SOLUTION: The solid state imaging element manufactured by this manufacturing method has many photoelectric conversion films 9r, 9g, 9b formed on the same plane above a semiconductor substrate 1, and signal read portions 4r, 4g, 4b for reading the signals according to the signal charges generated in the many photoelectric conversion films 9r, 9g, 9b respectively. This manufacturing method comprises the steps of forming the many photoelectric conversion films 9r, 9g, 9b by selectively and successively forming them of materials constituting the photoelectric conversion films 9r, 9g, 9b respectively on the same plane via masks, and forming a mask mounting member 10 on which the masks being to be mounted above the semiconductor substrate 1 before the photoelectric conversion film forming step. <P>COPYRIGHT: (C)2008,JPO&INPIT |
