| 摘要 |
PROBLEM TO BE SOLVED: To control the plane orientation of each of crystal particles obtained by crystallization using a CW laser or a pulse laser having an oscillation frequency of not less than 10 MHz, into a direction which can be substantially regarded as one direction in an irradiation region of the laser beam. SOLUTION: After forming a cap film over a semiconductor film, the semiconductor film is irradiated with the CW laser or the pulse laser having an oscillation freuency of not less than 10 MHz, thereby crystallizing the semiconductor film. The obtained semiconductor film has a plurality of crystal particles having a width of not less than 0.01μm and a length of not less than 1μm. In the semiconductor film; a direction perpendicular to the surface of the semiconductor is a first direction, and a surface using this first direction as a normal vector is a first plane. The plane orientation of the semiconductor film in the first plane has ä211} orientation of 40% or more within a range of angle fluctuation of±10°. The semiconductor device is manufactured using this semiconductor film. COPYRIGHT: (C)2008,JPO&INPIT |
