| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating the crystallinity of a semiconductor thin film, capable of evaluating the crystallinity of a semiconductor thin film without breaking a sample, and also capable of quickly evaluating a formed thin film by online, in a manufacture line for forming a thin film. SOLUTION: The crystallinity evaluation device for a silicon semiconductor thin film evaluates crystallinity of a silicon semiconductor thin film formed on a substrate. It comprises an excitation light radiating means which radiates carrier excitation light in a specified region of the silicon semiconductor thin film, an infrared light condensing/radiating means that radiates infrared light in the region while it is condensed, a reflection light intensity detecting means which detects intensity of the reflection light reflected on the silicon semiconductor thin film, and a data generating means for generating data for evaluating crystallinity from the detected signal. COPYRIGHT: (C)2008,JPO&INPIT
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