发明名称 |
Plasma processing apparatus having an evacuating arrangement to evacuate gas from a gas-introducing part of a process chamber |
摘要 |
A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.
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申请公布号 |
US2007251453(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20070785355 |
申请日期 |
2007.04.17 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HONGO TOSHIAKI;OSAWA TETSU |
分类号 |
B01J19/08;C23C16/00;C23C16/44;C23C16/455;C23C16/511;H01J37/32;H01L21/20;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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