摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern film, capable of forming a pattern film with a narrower width than the resolution of an exposure machine and a resist used independently of etching at the end. SOLUTION: The method includes the steps of: forming a base layer in the element forming surface of a substrate; forming a first frame layer having end surfaces facing each other across a space having a width W<SB>1</SB>on the base layer; forming a second frame layer having end surfaces facing each other across a space having a width W<SB>2</SB>larger than the width W<SB>1</SB>in the same direction as that of the width W<SB>1</SB>on the first frame layer, so that the space having the width W<SB>2</SB>is located right above the space having the width W<SB>1</SB>; forming a trench-forming film provided with a trench having a minimum width W<SB>3</SB>smaller than the width W<SB>1</SB>in the same direction as that of the width W<SB>1</SB>so as to fill at least a part of the spaces having the width W<SB>1</SB>and the width W<SB>2</SB>respectively; and forming a pattern film so as to fill at least a part of the trench. COPYRIGHT: (C)2008,JPO&INPIT |