| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor device in which a composite of aluminum and aluminum nitride is utilized as a heat radiation substrate of a semiconductor chip. SOLUTION: The semiconductor device is provided with a composite substrate 100 formed of aluminum nitride, aluminum, and inevitable impurities; and a semiconductor chip 120 joined to the composite substrate 100, and having a silicon substrate. The composite substrate 100 and the silicon substrate 120 are joined to each other via an eutectic layer 110 being eutectic with each of the aluminum and silicon. In this case, when the substrate of the semiconductor chip 120 is a compound semiconductor substrate, the composite substrate 100 and the semiconductor chip 120 are joined to each other via a metal layer formed on the composite substrate 100 and an eutectic layer formed on the metal layer and being eutectic with each of the metal layer and the composite semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT |
