发明名称 SOLID-STATE DEVICE STRUCTURE, AND ELECTRIC/ELECTRONIC DEVICE AND ELECTRIC/ELECTRONIC APPLIANCE USING IT
摘要 PROBLEM TO BE SOLVED: To provide a nanodevice structure in which the electric/electronic properties of a nanostructure consisting of fullerene molecules can be controlled freely. SOLUTION: A device structure consisting of fullerene molecules has a solid-state structure in which a fullerene molecule layer is interposed between electrodes, and allows the conductivity of the fullerene molecule layer to be controlled through application of a voltage to the electrodes. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007288171(A) 申请公布日期 2007.11.01
申请号 JP20070071067 申请日期 2007.03.19
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 NAKAYAMA TOMONOBU;NAKATANI MASATO;TSUKAMOTO SHIGERU;AONO MASAKAZU
分类号 H01L29/06;B82B1/00;B82B3/00;C01B31/02;H01L27/10 主分类号 H01L29/06
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