发明名称 TRANSFERRING METHOD OF THIN FILM ELEMENT, TRANSFER OBJECT, TRANSFER PRODUCT, CIRCUIT BOARD, AND DISPLAY
摘要 PROBLEM TO BE SOLVED: To provide a transferring method of a metal oxide thin film element for forming a transparent wiring having sufficient adhesive properties, high light transmission, low resistance, high definition, high reliability, insulation properties and satisfying such requirement as a reduced cost, short delivery time, a low environmental load, etc. not only on a glass substrate but also on a substrate (an object to be transferred) comprising a polymer-based material as a circuit board. SOLUTION: This method is for selectively transferring a thin film element of a transfer unit having a metal oxide thin film element that is formed on a substrate to an object to be transferred. The transfer unit is provided with a photothermal conversion layer at least on one surface of the substrate and the thin film element. The transfer unit and the object to be transferred face each other via an adhesive layer, and the photothermal conversion layer is selectively irradiated with a laser beam. By the obtained heat, the adhesive layer is selectively melted/softened. The thin film element and the object to be transferred are selectively bonded together. The thin film element that is selectively bonded is separated from the transfer object, and then the transfer layer is formed on the object to be transferred. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007288148(A) 申请公布日期 2007.11.01
申请号 JP20070035404 申请日期 2007.02.15
申请人 NIPPON DENKI KAGAKU CO LTD 发明人 KATSURA SUMIO;NAKAYAMA AKIRA;YOSHIDA KATSUHIRO;HIROSE AKIO;SANO TOMOKAZU;KOBAYASHI DAIJI;OZAI HIROYUKI;SETO TADAO
分类号 H05K3/20;G09F9/00;H01B5/14;H01B13/00 主分类号 H05K3/20
代理机构 代理人
主权项
地址