| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device for preventing a decrease in characteristics caused by the substrate floating effect of a MOS transistor for composing an input/output circuit, in the semiconductor integrated circuit device that is arranged on an SOI substrate and allows the supply voltage of the input/output circuit section to be higher than that of a core circuit. SOLUTION: Finger length a1 in a transistor P11 is longer than finger length A1 in a transistor P1, and finger length b1 in a transistor N11 is longer than finger length B1 in a transistor N1. The finger length b1 in the transistor N11 is shorter than the finger length A1 in the transistor P1, so that a relationship of a1>A1>b1>B1 is established. In the relationship between an I/O 101 and a logic circuit 102, the finger length of a MOS transistor for composing the logic circuit 102 is allowed to become longer than the finger length of the MOS transistor for composing the I/O 101 in a MOS transistor having the same conductivity type. COPYRIGHT: (C)2008,JPO&INPIT
|
