| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having stable voltage/current characteristics, and to provide a display. SOLUTION: The thin-film transistor comprises: a semiconductor layer 13 having a first diffusion region 131, a channel region 132, and a second diffusion region 133 on a substrate 11; a gate electrode 15 arranged on the opposing surface of the semiconductor layer 13 via a gate insulating layer 14; a conductive film layer 16a for connection that is provided at a side opposite to the side of the gate insulating film 14 in the semiconductor layer 13, and is extended to one portion of the channel region 132 from the first diffusion region 131 so that the first diffusion region 131 is electrically connected to the channel region 132; and a conductive film layer 16b for laying in the second diffusion region 133. COPYRIGHT: (C)2008,JPO&INPIT
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