发明名称 VAPOR DEPOSITION SOURCE AND VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To reduce the occurrence of splash in a vapor deposition source and to perform vapor deposition at a stable, high deposition speed. SOLUTION: A plurality of doughnut-shaped flat plates 2 is vertically stacked in a crucible 1, and a vapor deposition material 3 is thinly mounted on each of the doughnut-shaped flat plates 2. The vapor deposition material 3 on the doughnut-shaped flat plate 2 on each layer is heated by heaters 12 surrounding the crucible 1 to generate vapor from the vapor deposition material 3, and the vapor is made to flow through a flow space A on each layer into a vertical flow path B and discharged from an opening 10a at the top of the flow path B toward a substrate to be deposited. The conductance of the flow space A is smaller than the conductance of the flow path B. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007284788(A) 申请公布日期 2007.11.01
申请号 JP20070043094 申请日期 2007.02.23
申请人 CANON INC 发明人 YOSHIKAWA TOSHIAKI;MASHITA SEIJI;FUKUDA NAOTO
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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