| 摘要 |
PROBLEM TO BE SOLVED: To form a large-area diamond film with uniform film thickness and film quality by uniformizing a temperature of a substrate through optimizing the arrangement of filaments, with a hot-filament CVD method. SOLUTION: The method for synthesizing diamond includes introducing a mixed gas of a source gas containing carbon and hydrogen onto the surface of metal filament heated to 1,800°C or higher, which are arranged so as to face to the substrate, and so as to be approximately parallel to each other, and decomposing the mixed gas to grow diamond on the surface of the substrate. The filaments are arranged so that spaces between the filaments or between the filament and the substrate in the center part of the metal filament group can be wider than spaces between the filaments or between the filament and the substrate in the end part of the filament group, to uniformize a temperature of the surface of the substrate. COPYRIGHT: (C)2008,JPO&INPIT
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