发明名称 SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY
摘要 Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
申请公布号 US2007254235(A1) 申请公布日期 2007.11.01
申请号 US20060380731 申请日期 2006.04.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ALLEN ROBERT D.;BROCK PHILLIP J.;LARSON CARL E.;SANDERS DANIEL P.;SOORIYAKUMARAN RATNAM;SUNDBERG LINDA K.;TRUONG HOA D.;WALLRAFF GREGORY M.
分类号 G03C1/00 主分类号 G03C1/00
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