发明名称 |
METHOD FOR GROWTH OF SEMIPOLAR (Al,In,Ga,B)N OPTOELECTRONIC DEVICES |
摘要 |
A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
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申请公布号 |
US2007252164(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20070676999 |
申请日期 |
2007.02.20 |
申请人 |
ZHONG HONG;KAEDING JOHN F;SHARMA RAJAT;SPECK JAMES S;DENBAARS STEVEN P;NAKAMURA SHUJI |
发明人 |
ZHONG HONG;KAEDING JOHN F.;SHARMA RAJAT;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
分类号 |
H01L21/00;H01L29/06;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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