A method is provided for making a semiconductor device. In accordance with the method, a substrate (203) is provided which has first (205) and second (207) gate structures thereon. A first stressor layer (215) is formed over the substrate, and a sacrificial layer (216) is formed over the first stressor layer. A second stressor layer (219) is formed over the sacrificial layer.
申请公布号
WO2007124209(A2)
申请公布日期
2007.11.01
申请号
WO2007US63439
申请日期
2007.03.07
申请人
FREESCALE SEMICONDUCTOR INC.;GRUDOWSKI, PAUL, A.;GOEDEKE, DARREN, V.;HACKENBERG, JOHN, J.
发明人
GRUDOWSKI, PAUL, A.;GOEDEKE, DARREN, V.;HACKENBERG, JOHN, J.
