APPARATUS FOR PROCESSING SUBSTRATE AND PROCESS FOR PRODUCING SUBSTRATE

摘要

An apparatus for substrate processing in which the step of removing a substance to be treated is not complicated, the temperatures of the substance to be treated and a wet ozonous gas are easily controlled, and even a photoresist having ions implanted in a high dose can be removed. An inert gas (2) is bubbled into a treating liquid (3) to produce a wet inert gas (4). The wet inert gas (4) is mixed with ozone gas (5) to produce a wet ozonous gas (6). The wet ozonous gas (6) is heated to 120-200°C and supplied to a photoresist (7a) heated to 180-350°C. Thus, the photoresist (7a) is ashed while instantly vaporizing the treating liquid (3) which has adhered to the photoresist (7a).