NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An NVM(non-volatile memory) device is provided to improve charge storage capacity by forming a charge storage layer having a stack structure of a high dielectric layer, silicon and a high dielectric layer. A lower insulation layer(13) is formed on a substrate(11). A charge storage layer(17) is formed on the lower insulation layer. An upper insulation layer(18) is formed on the charge storage layer. A gate electrode(19) is formed on the upper insulation layer. The charge storage layer is composed of a first dielectric layer on the lower insulation layer, a silicon layer formed on a first silicate layer, and a second dielectric layer formed on the oxide layer. The lower and upper insulation layers are made of a high dielectric layer having a dielectric constant of 3.9 or higher.