| 发明名称 |
SURFACE ACOUSTIC WAVE DEVICE, MODULE DEVICE, OSCILLATION CIRCUIT AND METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compact SH wave-type SAW device as a surface wave device using a crystal substrate having a large Q value and excellent frequency aging characteristics. <P>SOLUTION: This surface acoustic wave device includes a piezoelectric substrate and an IDT electrode formed of alloy containing Al as main components on the piezoelectric substrate, and uses an excitation wave as the SH wave. The piezoelectric substrate is a flat quartz plate in which the cut angle θ of the rotary Y cut quartz substrate is set in the range of -64.0°<θ<-49.3° and the surface acoustic wave propagation direction is set to 90°±5° with respect to the crystal X axis. When the oscillating surface acoustic wave in an SH wave-type surface acoustic wave device has wavelength λ, the electrode film thickness H/λ standardized by the wavelength of the IDT electrode is set to 0.04<H/λ<0.12. In such an SH wave-type surface acoustic wave device, the piezoelectric substrate has etching marks formed by wet etching, and the IDT electrode is formed on a surface having the etching marks of the piezoelectric substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2007288812(A) |
申请公布日期 |
2007.11.01 |
| 申请号 |
JP20070187896 |
申请日期 |
2007.07.19 |
| 申请人 |
EPSON TOYOCOM CORP |
发明人 |
OWAKI TAKUYA;MITSUI YUJI;YOSHIZAWA GEN |
| 分类号 |
H03H9/145;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H01L41/332;H03B5/30;H03H3/08;H03H9/25;H03H9/64 |
主分类号 |
H03H9/145 |
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