| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a stress on a passivation film and prevent crack thereof. <P>SOLUTION: The semiconductor device comprises a semiconductor chip 10 with an integrated circuit 12 comprising a plurality of layers of wiring pattern which are formed thereon and a passivation film 30 covering a wiring pattern 20 on the uppermost layer excluding a part thereof. The wiring pattern 20 on the uppermost layer is provided with a pad 24. The passivation film 30 is formed so as to be disposed on the end part of the pad 24. At least one part of the pad 24 is formed so as to be thinner than the other part of the wiring pattern 20. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
